Features: ·Divide-by-Four·+5.0 dBm Output Power·-30 dBc Fundamental Leakage·Single-ended or Differential Input & Output·100% On-Wafer, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vcc) +7.0 VDC Supply Current (Icc) 150 mA...
E1000-BD: Features: ·Divide-by-Four·+5.0 dBm Output Power·-30 dBc Fundamental Leakage·Single-ended or Differential Input & Output·100% On-Wafer, DC and Output Power Testing·100% Visual Inspection to MIL-S...
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Supply Voltage (Vcc) | +7.0 VDC |
Supply Current (Icc) | 150 mA |
Input Power (Pin) | +15 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table1 |
Junction Temperature (Tch) | MTTF Table1 |
(1) Junction temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 2.0-16.0 GHz GaAs MMIC freqency divider E1000-BD is an ECL (Emitter Coupled Logic) static frequency divider (divide-by-four) consisting of two cascaded divide-by-two circuits. Even-order harmonic levels are minimized by driving the inputs with a balanced input signal, and by taking the output differentially, but the circuit can be operated in a single-ended fashion with unused inputs & outputs open circuit. This MMIC uses Mimix Broadband's 2 um GaAs HBT device model technology to ensure high reliability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.