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Data Sheet BTS 443 P

Features: •Short circuit protection •Current limitation •Overload protection •Thermal shutdown •Overvoltage protection (including load dump) •Loss of ground protection •Loss of Vbb protection (with external diode for charged inductive loads) •Very lo...

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Data Sheet BTS 443 P: Features: •Short circuit protection •Current limitation •Overload protection •Thermal shutdown •Overvoltage protection (including load dump) •Loss of ground prote...

Data Sheet BTS 443 P Data Sheet

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Part Number:
Data Sheet BTS 443 P
Supply Ability:
5000

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Product Details

Description



Features:

•Short circuit protection 
•Current limitation
•Overload protection
•Thermal shutdown
•Overvoltage protection (including load dump)
•Loss of ground protection
•Loss of Vbb protection (with external diode for charged inductive loads)
•Very low standby current
•Fast demagnetisation of inductive loads 
•Electrostatic discharge (ESD) protection
•Optimized static electromagnetic compatibility (EMC) 
 


Application

•Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads
•All types of resistive, capacitive and induc
  tive loads  (no PWM with inductive loads)
•Replaces electromechanical relays, fuses and discrete circuits


Specifications

Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4) Vbb
36
V
Supply voltage for full short circuit protection 

(see also diagram on page 9)                 Tj=-40...150 : 		Vbb
 
241)
V

Load dump protection VLoadDump= UA+ Vs, UA= 13.5 V

RI= 2, RL= 2.7 , td= 200 ms, IN= low or high

VLoad dump2)
 
60
v
Load current (Short-circuit current, see page 4) IL
 self-limited
A
Operating temperature range
Storage temperature range 		Tj
 
Tstg
 
-40 ...+150
-55 ...+150

Power dissipation (DC) TC 25°C

 
Ptot
42
W

Inductive load switch-off energy dissipation, 
single pulse U=12V, I=10A, L=3mH                      Tj=150 :

 
EAS
0.15
J
Electrostatic discharge capability (ESD)
  (Human Body Model)                               
acc. ESD assn. std. S5.1-1993;  R=1.5kΩ; C=100pF
 		 VESD
4.0
kV
Current through input pin (DC)
Current through current sense pin (DC)
see internal circuit diagrams page 7
 		 IIN
IIS
 
+15, -100
+15, -100
mA



Description

Data Sheet BTS 443 P is N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology. Providing embedded protective functions.


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