Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Bipolar Devices·Specifically Designed for 12 Volt ApplicationsSpecifications Parameter Symbol Rating Units Drain-SourceVoltage VD...
DUI230S: Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Bipolar Devices·Specifically Designed for 1...
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Parameter | Symbol | Rating | Units |
Drain-SourceVoltage | VDS | 40 | V |
Gate-Source Voltage | VGS | 20 | V |
Drain-Source Current | IDs | 8 | A |
Power Dissipation | PD | 175 | W |
Junction Temperature | TJ | 200 | |
Storage Temperature | TSTG | -55to+150 | |
Thermal Resistance | JC | 1 | /W |