DU2880V

Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 ...

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SeekIC No. : 004330285 Detail

DU2880V: Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Para...

floor Price/Ceiling Price

Part Number:
DU2880V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Description



Features:

·N-Channel Enhancement Mode Device
·DMOS Structure
·Lower Capacitances for Broadband Operation
·High Saturated Output Power
·Lower Noise Figure Than Competitive Devices



Specifications

Parameter Symbol Rating Units
Drain-Source Voltage VDS 65 V
Gate-Source Voltage VGS 20 V
Drain-Source Current IDS 8 A
Power Dissipation
PD 206 W
JunctionTemperature TJ 200
StorageTemperature Tstg -55 to +150
Thermal Resistance JC 0.65 /W



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