Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 ...
DU2880V: Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Para...
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Parameter | Symbol | Rating | Units |
Drain-Source Voltage | VDS | 65 | V |
Gate-Source Voltage | VGS | 20 | V |
Drain-Source Current | IDS | 8 | A |
Power Dissipation |
PD | 206 | W |
JunctionTemperature | TJ | 200 | |
StorageTemperature | Tstg | -55 to +150 | |
Thermal Resistance | JC | 0.65 | /W |