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DU2860T

Features: N-Channel Enhancement Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output PowerLower Noise Figure Than Bipolar DevicesSpecifications Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage ...

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SeekIC No. : 004330283 Detail

DU2860T: Features: N-Channel Enhancement Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output PowerLower Noise Figure Than Bipolar DevicesSpecifications Parameter ...

DU2860T Data Sheet

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Part Number:
DU2860T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices


Specifications

Parameter

Symbol

Rating

Units

Drain-Source Voltage

VDS

65

V

Gate-Source Voltage

VGS

20

V

Drain-Source Voltage

IDS

12

A

Power Dissipation

PD

159

w

Junction Temperature

TJ

200

Storage Temperature

TSTG

-65to +150

Thermal Resistance

qjc

1.1

/w




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