Features: N-Channel Enhancement Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output PowerLower Noise Figure Than Bipolar DevicesSpecifications Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage ...
DU2840S: Features: N-Channel Enhancement Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output PowerLower Noise Figure Than Bipolar DevicesSpecifications Parameter ...
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Parameter |
Symbol |
Rating |
Units |
Drain-Source Voltage |
VDS |
65 |
V |
Gate-Source Voltage |
VGS |
20 |
V |
Drain-Source Voltage |
IDS |
18 |
A |
Power Dissipation |
PD |
125 |
w |
Junction Temperature |
TJ |
200 |
|
Storage Temperature |
TSTG |
-55to +150 |
|
Thermal Resistance |
qjc |
1.4 |
/w |