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DU28200M

Features: N-Channel Enhancemenr Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output PowerLower Noise Figure Than Competitive DevicesSpecifications Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage...

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DU28200M: Features: N-Channel Enhancemenr Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output PowerLower Noise Figure Than Competitive DevicesSpecifications Paramet...

DU28200M Data Sheet

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Part Number:
DU28200M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

N-Channel Enhancemenr Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices


Specifications

Parameter

Symbol

Rating

Units

Drain-Source Voltage

VDS

65

V

Gate-Source Voltage

VGS

20

V

Drain-Source Voltage

IDS

24

A

Power Dissipation

PD

389

w

Junction Temperature

TJ

200

Storage Temperature

TSTG

-65to +150

Thermal Resistance

qjc

0.45

/w




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