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DU1215S

Features: N-Channel Enhancement Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output Power Lower Noise Figure Than Bipolar DevicesSpecifically Designed for 12 Volt ApplicationsSpecifications Parameter Symbol Rating Units Drain-Source Voltage...

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DU1215S: Features: N-Channel Enhancement Mode DeviceDMOS StructureLower Capacitances for Broadband OperationHigh Saturated Output Power Lower Noise Figure Than Bipolar DevicesSpecifically Designed for 12 Vol...

DU1215S Data Sheet

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Part Number:
DU1215S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 N-Channel Enhancement Mode Device
 DMOS Structure
 Lower Capacitances for Broadband Operation
 High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
 Specifically Designed for 12 Volt Applications


Specifications

Parameter

Symbol

Rating

Units

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

20

V

Drain-Source Voltage

IDS

4

A

Power Dissipation

PD

87.5

w

Junction Temperature

TJ

200

Storage Temperature

TSTG

-55to +150

Thermal Resistance

qjc

2

/w




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