DTDG14GP Selling Leads, Price trend, DTDG14GP DataSheet download, circuit diagram from SeekIC.com

Features: 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)2) Low saturation voltage, VCE(sat)=0.4V (IC/IB=500mA/5mA)3) Built-in zener diode to protect the transistor against reverse voltages when connected to alow load.Specifications Parameter Symbol Limits Unit Collector-base voltag...

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SeekIC No. : 004330228 Detail

DTDG14GP: Features: 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)2) Low saturation voltage, VCE(sat)=0.4V (IC/IB=500mA/5mA)3) Built-in zener diode to protect the transistor against reverse voltages when connect...

DTDG14GP Data Sheet

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Part Number:: DTDG14GP
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/8/13

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DTDG14GPT100 evaluate
US $.09 - .28 / Piece

Transistors Switching (Resistor Biased) DIGITAL NPN 60V 1A
DTDG23YP evaluate
Features: 1) High DC current gain. (Min. 300 at VO/IO=2V/0.5A)2) Low output voltage. (Typ. 0.4V at...
DTDG23YPT100 evaluate
US $.14 - .41 / Piece

Transistors Switching (Resistor Biased) NPN 60V 1A

Product Details

Description

Features:

1) High h_FE.
    (typ. h_FE =750 V_CE/I_C=2V/0.5A)
2) Low saturation voltage,
     V_CE(sat)=0.4V
    (I_C/I_B=500mA/5mA)
3) Built-in zener diode to protect the
   transistor against reverse voltages
   when connected to alow load.

Specifications

Parameter	Symbol	Limits	Unit
Collector-base voltage	V_CBO	60±10	V
Collector-emitter voltage	V_CEO	60±10	V
Emitter-base voltage	V_EBO	5	V
Collector current	I_C	1	A
Collector current	I_CP	2	A(Pulse) *1
Collector power dissipation	P_C	0.5	W *2
Collector power dissipation	P_C	2	W *2
Junction temperature	T_j	150
Storage temperature	T_stg	−55~+150

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DTDG14GP

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