Features: 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)2) Low saturation voltage, VCE(sat)=0.4V (IC/IB=500mA/5mA)3) Built-in zener diode to protect the transistor against reverse voltages when connected to alow load.Specifications Parameter Symbol Limits Unit Collector-base voltag...
DTDG14GP: Features: 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)2) Low saturation voltage, VCE(sat)=0.4V (IC/IB=500mA/5mA)3) Built-in zener diode to protect the transistor against reverse voltages when connect...
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Transistors Switching (Resistor Biased) DIGITAL NPN 60V 1A
Parameter |
Symbol |
Limits |
Unit |
Collector-base voltage | VCBO | 60±10 | V |
Collector-emitter voltage | VCEO | 60±10 | V |
Emitter-base voltage | VEBO | 5 | V |
Collector current | IC | 1 | A |
ICP | 2 | A(Pulse) *1 | |
Collector power dissipation | PC | 0.5 | W *2 |
2 | |||
Junction temperature | Tj | 150 | |
Storage temperature | Tstg | −55~+150 |