DTC363EUT106

Transistors Switching (Resistor Biased) NPN 20V 600MA

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SeekIC No. : 00224439 Detail

DTC363EUT106: Transistors Switching (Resistor Biased) NPN 20V 600MA

floor Price/Ceiling Price

Part Number:
DTC363EUT106
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Typical Input Resistor : 6.8 KOhms Typical Resistor Ratio : 1
Mounting Style : SMD/SMT Package / Case : UMT-3
Peak DC Collector Current : 600 mA Maximum Operating Temperature : + 150 C
Packaging : Reel    

Description

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current :
Power Dissipation :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Typical Resistor Ratio : 1
Configuration : Single
Package / Case : UMT-3
Peak DC Collector Current : 600 mA
Typical Input Resistor : 6.8 KOhms


Description

The features of DTC363EUT106 can be summarized as (1) Low VO(on) makes these transistors optimal for muting circuits. VO(on) = 40mV (Typ.) (IO/ II = 50mA/2.5mA); (2)They can be used at high current (IC= 600mA)..

The absolute maximum ratings of the DTC363EUT106 are: (1)supply voltage: 20V; (2)input voltage: -10 to +10V; (3)output current: 600mA; (4)power dissipation: 200mW; (5)junction temperature: 150; (6)storage temperature: -55 to +150.

The following is about the electrical characteristics of DTC363EUT106: (1)input voltage: 0.5V max at VCC=5V, IO=100A, 2V min at VO=0.3V, IO=10mA; (2)output voltage: 40mV typical and 80mV max at IO/II=50mA/2.5mA; (3)input current: 1.3mA max at VI=5V; (4)output current: 0.5A max at VCC=15V, VI=0V; (5)DC current gain: 70 min at VO=5V, IO=50mA; (6)input resistance: 4.76k min, 6.8k typical and 8.84k max; (7)resistance ratio: 0.8 min, 1 typical and 1.2 max; (8)transition frequency: 200 MHz typical at VCE=10V, IE=-50mA, f=100MHz; (9)output "ON" resistance: 1.1 typical at VI=7V, RL=1k, f=1kHz.




Parameters:

Technical/Catalog InformationDTC363EUT106
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)600mA
Power - Max200mW
Resistor - Base (R1) (Ohms)6.8K
Resistor - Emitter Base (R2) (Ohms)6.8K
Vce Saturation (Max) @ Ib, Ic80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Frequency - Transistion200MHz
Mounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323, UMT3
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names DTC363EUT106
DTC363EUT106



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