DTC123JM

DescriptionThe feature of DTC123JM are as follows: (1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit); (2)The bias resistors consist of thin film resistors with complete isolation to allow negative bia...

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SeekIC No. : 004330080 Detail

DTC123JM: DescriptionThe feature of DTC123JM are as follows: (1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit)...

floor Price/Ceiling Price

Part Number:
DTC123JM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Description

The feature of DTC123JM are as follows: (1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit); (2)The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects; (3) Only the on / off conditions need to be set for operation, making device design easy;.

The absolute maximum ratings of the DTC123JM are: (1)Supply voltage: 50 V ; (2)Input voltage: -5 to +12 V ; (3)Ouput current: 100 mA; (4)Power dissipation: 150 200 300 mW ; (5)Junction temperature: 150  ; (6)Storage temperature: -55 to +150  .

The following is about the electrical characteristics of DTC123JM: (1)input voltage: 0.5V max at VCC = 5V, IO = 100A, 1.1V min at VO = 0.3V, IO = 5mA; (2)output voltage: 0.1V typical and 0.3V max at IO/II = 5mA/0.25mA; (3)input current: 3.6mA max at VI = 5V; (4)output current: 3.6mA max at VCC = 50V, VI = 0V; (5)DC current gain: 80 min at VO = 5V, IO = 10mA; (6)input resistance: 1.54k min, 2.2k typical and 2.86k max ; (7)resistance ratio: 17 min, 21 typical and 26 max; (8)transistion frequency: 250MHz at VCE = 10V, IE = -5mA, f = 100MHz.




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