Features: High Cell DensityDMOSTechnologyLow On-State ResistanceHigh Power and Current CapabilityFast Switching SpeedHigh Transient TolerancePinoutSpecifications Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current Not...
DT456P: Features: High Cell DensityDMOSTechnologyLow On-State ResistanceHigh Power and Current CapabilityFast Switching SpeedHigh Transient TolerancePinoutSpecifications Characteristic Symbol Value ...
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Characteristic | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | -30 | V |
Gate-Source Voltage | VGSS | ±20 | V |
Drain Current Note 1a Continuous Pulsed |
ID | ±7.5 ±20 |
A |
Maximum Power Dissipation Note 1a Note 1b Note 1c |
Pd | 3.0 1.3 1.1 |
W |
Operating and Storage Temperature Range | Tj,TSTG | -65 to +150 | °C |