DT456P

Features: High Cell DensityDMOSTechnologyLow On-State ResistanceHigh Power and Current CapabilityFast Switching SpeedHigh Transient TolerancePinoutSpecifications Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current Not...

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DT456P Picture
SeekIC No. : 004329903 Detail

DT456P: Features: High Cell DensityDMOSTechnologyLow On-State ResistanceHigh Power and Current CapabilityFast Switching SpeedHigh Transient TolerancePinoutSpecifications Characteristic Symbol Value ...

floor Price/Ceiling Price

Part Number:
DT456P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/21

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Product Details

Description



Features:

High Cell DensityDMOSTechnology
Low On-State Resistance
High Power and Current Capability
Fast Switching Speed
High Transient Tolerance



Pinout

  Connection Diagram


Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±20 V
Drain Current            Note 1a Continuous
                           Pulsed
ID ±7.5
±20
A
Maximum Power Dissipation   Note 1a
                                    Note 1b
                                    Note 1c
Pd 3.0
1.3
1.1
W
Operating and Storage Temperature Range Tj,TSTG -65 to +150 °C



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