DescriptionThe DT28F160F3T120 is designed as one kind of 3 volt fast boot block flash memory that provides density upgrades with pinout compatibility for 8- and 16-Mbit densities. This family of products is a high-performance, low-voltage memory with a 16-bit data bus and individually erasable blo...
DT28F160F3T120: DescriptionThe DT28F160F3T120 is designed as one kind of 3 volt fast boot block flash memory that provides density upgrades with pinout compatibility for 8- and 16-Mbit densities. This family of pro...
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The DT28F160F3T120 is designed as one kind of 3 volt fast boot block flash memory that provides density upgrades with pinout compatibility for 8- and 16-Mbit densities. This family of products is a high-performance, low-voltage memory with a 16-bit data bus and individually erasable blocks. And these blocks are optimally-sized for code and data storage.
Features of the DT28F160F3T120 are:(1)up to 60 MHz effective zero wait-state performance;(2)2.7 V-3.6 V read and write operations for low power designs;(3)5 V-safe I/O enables interfacing to 5 V devices;(4)manufactured on ETOX V flash technology;(5)fast program suspend capability;(6)eight 4-kword blocks for data;(7)automated program and block erase algorithms.
The absolute maximum ratings of the DT28F160F3T120 can be summarized as:(1)temperature under bias:-40 °C to +125°C;(2)storage temperature:-65°C to +125°C;(3)voltage on any pin (except Vcc, VCCQ, and Vpp):-0.5 V to +5.5 V;(4)Vpp voltage:-0.5 V to +13.5 V;(5)Vcc and VCCQ voltage:-0.2 V to +5.0 V;(6)output short circuit current:100 mA. If you want to know more information such as the electrical characteristics about the DT28F160F3T120, please download the datasheet in www.seekic.com or www.chinaicmart.com .