DescriptionThe DT28F004S5 is designed as one kind of Intel 5 Volt FlashFile memory that provides high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. The 5 Volt FlashFile memories are available at various densities in the same package type. Their symm...
DT28F004S5: DescriptionThe DT28F004S5 is designed as one kind of Intel 5 Volt FlashFile memory that provides high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. T...
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The DT28F004S5 is designed as one kind of Intel 5 Volt FlashFile memory that provides high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. The 5 Volt FlashFile memories are available at various densities in the same package type. Their symmetrically-blocked architecture, voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards.
Features of the DT28F004S5 are:(1)two 32-byte write buffers:2 us per byte effective programming time;(2)low voltage operation:5 V Vcc and 5 V Vpp;(3)70 ns read access time (16 Mbit) and 90 ns read access time (32 Mbit);(4)high-density symmetrically-blocked architecture:32 64-Kbyte erase blocks (16 Mbit) and 64 64-Kbyte erase blocks (32 Mbit);(5)system performance enhancements: STS status output;(6)configurable x8 or x16 I/O;(7)ETOX™ V nonvolatile flash technology.
The absolute maximum ratings of the DT28F004S5 can be summarized as:(1)temperature under bias commercial:0 °C to 70 °C;(2)temperature under bias extended:40 °C to +85 °C;(3)storage temperature:65 °C to +125 °C;(4)voltage on any pin (except Vcc and Vpp):0.5 V to +Vcc+0.5 V;(5)output short circuit current:100 mA;(6)Vcc supply voltage:-0.2 V to +Vcc+0.5 V. If you want to know more information such as the electrical characteristics about the DT28F004S5, please download the datasheet in www.seekic.com or www.chinaicmart.com .