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DSEA16-06BC

Features: ·Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation·Low cathode to tab capacitance (<15pF)·Planar passivated chips·Very short recovery time·Extremely low switching losses·Low IRM-values·Soft recovery behaviour·Ep...

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SeekIC No. : 004329538 Detail

DSEA16-06BC: Features: ·Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation·Low cathode to tab capacitance (<15pF)·Planar passivated chi...

DSEA16-06BC Data Sheet

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Part Number:
DSEA16-06BC
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

·Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
·Low cathode to tab capacitance (<15pF)
·Planar passivated chips
·Very short recovery time
·Extremely low switching losses
·Low IRM-values
·Soft recovery behaviour
·Epoxy meets UL 94V-0


Application

·Antiparallel diode for high frequency switching devices
·Antisaturation diode
·Snubber diode
·Free wheeling diode in converters and motor control circuits
·Rectifiers in switch mode power supplies (SMPS)
·Inductive heating
·Uninterruptible power supplies (UPS)
·Ultrasonic cleaners and welders


Specifications

Symbol Test Conditions Maximum Ratings
IFRMS   19 A
IFAVM TC = 110°C; rectangular, d = 0.5 8 A
IFRM TVJ = 45°C; tp = 10 ms (50 Hz), sine 50 A
EAS
 TVJ = 25°C; non-repetitive
IAS = 0.9 A; L = 180 µH

0.1

 mJ
IAR VA = 1.5`VR typ.; f = 10 kHz; repetitive 0.1 A
TVJ   -55...+175 °C
TVJM   175 °C
Tstg   -55...+150 °C
TL 1.6 mm (0.063 in) from case for 10 s 260 °C
Ptot TC = 25°C 60 W
VISOL 50/60 Hz RMS; IISOL 1 mA 2500 V~
FC
mounting force with clip		 11...65 /2.5...15 N / lb
Weight  
2		 g



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