DIODE RECT 2.6A 600V AXIAL
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US $.09 - .1 / Piece
Transistors Bipolar (BJT) SM SIG BIPLR TRANS GL WNG 2.9x2.8mm
US $.09 - .1 / Piece
Transistors Bipolar (BJT) SM SIG BIPLR TRANS GL WNG 2.9x2.8mm
Series: | - | Manufacturer: | ON Semiconductor | ||
Diode Type: | Standard | Voltage - DC Reverse (Vr) (Max): | 600V | ||
Current - Average Rectified (Io): | * | Current - Average Rectified (Io) (per Diode): | - | ||
Voltage - Forward (Vf) (Max) @ If: | * | Gate-Source Breakdown Voltage : | 2 V | ||
Speed: | * | Reverse Recovery Time (trr): | - | ||
Current - Reverse Leakage @ Vr: | 10µA @ 600V | Capacitance @ Vr, F: | - | ||
Diode Configuration: | - | Mounting Type: | * | ||
Package / Case: | * | Supplier Device Package: | * |
Absolute maximum ratings | |
---|---|
VRM [V] | 600 |
IFSM [A] | 120 |
Electrical characteristics | |
---|---|
trr max *IR=1A [ns] | - |
VR [V] | - |
IF/IFM* [mA] | - |
VF max [V] | 1.05 |
IF [A] | 2.6 |
IR max [µA] | 10 |
VR [V] | 600 |