Features: 600 mA output capability24V output capabilityDual sink and dual source outputsFast switching timesSource base drive externally adjustableInput clamping diodesTTL compatibleSpecificationsSupply Voltage VCC1 (Note 5) ..........................................7VSupply Voltage VCC2 (Note 5) ...
DS75325: Features: 600 mA output capability24V output capabilityDual sink and dual source outputsFast switching timesSource base drive externally adjustableInput clamping diodesTTL compatibleSpecificationsSu...
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The DS75325 is a monolithic memory driver which features high current outputs as well as internal decoding of logic inputs. This circuit is designed for use with magnetic memories. The circuit contains two 600 mA sink-switch pairs and two 600 mA source-switch pairs. Inputs A and B determine source selection while the source strobe (S1) allows the selected source turn on. In the same manner, inputs C and D determine sink selection while the sink strobe (S2) allows the selected sink turn on.
Sink-output collectors DS75325 feature an internal pull-up resistor in parallel with a clamping diode connected to VCC2. This protects the outputs from voltage surges associated with switching inductive loads.
The source stage DS75325 features Node R which allows extreme flexibility in source current selection by controlling the amount of base drive to each source transistor. This method of setting the base drive brings the power associated with the resistor outside the package thereby allowing the circuit to operate at higher source currents for a given junction temperature. If this method of source current setting is not desired, then Nodes R and RINT can be shorted externally, activating an internal resistor connected from VCC2 to Node R. This provides adequate base drive for source currents up to 375 mA with VCC2 = 15V or 600 mA with VCC2 = 24V.