DS42546

Features: MCP Features` Power supply voltage of 2.7 to 3.3 volt` High performance - 85 ns maximum access time` Package - 69-Ball FBGA` Operating Temperature - 25°C to +85°CFlash Memory FeaturesARCHITECTURAL ADVANTAGES` Simultaneous Read/Write operations - Data can be continuously read from on...

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SeekIC No. : 004329108 Detail

DS42546: Features: MCP Features` Power supply voltage of 2.7 to 3.3 volt` High performance - 85 ns maximum access time` Package - 69-Ball FBGA` Operating Temperature - 25°C to +85°CFlash Memory FeaturesA...

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Part Number:
DS42546
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

MCP Features
` Power supply voltage of 2.7 to 3.3 volt
` High performance
   - 85 ns maximum access time
` Package
   - 69-Ball FBGA
` Operating Temperature
   - 25°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
` Simultaneous Read/Write operations
   - Data can be continuously read from one bank while executing erase/program functions in other bank
   - Zero latency between read and write operations
` Secured Silicon (SecSi) Sector: Extra 64 KByte sector
   - Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function.
   - Customer lockable: Can be read, programmed, or erased just like other sectors. Once locked, data cannot be changed
` Zero Power Operation
   - Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
` Top boot block
` Manufactured on 0.23 m process technology
` Compatible with JEDEC standards
   - Pinout and software compatible with single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
` High performance
   - 85 ns access time
  - Program time: 7 s/word typical utilizing Accelerate function
` Ultra low power consumption (typical values)
   - 2 mA active read current at 1 MHz
   - 10 mA active read current at 5 MHz
   - 200 nA in standby or automatic sleep mode
` Minimum 1 million write cycles guaranteed per sector
` 20 Year data retention at 125°C
   - Reliable operation for the life of the system
SOFTWARE FEATURES
` Data Management Software (DMS)
   - AMD-supplied software manages data programming and erasing, enabling EEPROM emulation
   - Eases sector erase limitations
` Supports Common Flash Memory Interface (CFI)
` Erase Suspend/Erase Resume
   - Suspends erase operations to allow programming in same bank
` Data# Polling and Toggle Bits
   - Provides a software method of detecting the status of program or erase cycles
` Unlock Bypass Program command
   - Reduces overall programming time when issuing multiple program command sequences
HARDWARE FEATURES
` Any combination of sectors can be erased
` Ready/Busy# output (RY/BY#)
   - Hardware method for detecting program or erase cycle completion
` Hardware reset pin (RESET#)
   - Hardware method of resetting the internal state machine to reading array data
` WP#/ACC input pin
   - Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status
   - Acceleration (ACC) function accelerates program timing
` Sector protection
   - Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector
   - Temporary Sector Unprotect allows changing data in protected sectors in-system
SRAM Features
` Power dissipation
   - Operating: 50 mA maximum
   - Standby: 7 A maximum
` CE1#s and CE2s Chip Select
` Power down features using CE1#s and CE2s
` Data retention supply voltage: 1.5 to 3.3 volt
` Byte data control: LB#s (DQ0DQ7), UB#s (DQ8DQ15)




Specifications

Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . 55°C to +125°C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . . 25°C to +85°C
Voltage with Respect to Ground
VCCf/VCCs (Note 1) . . . . . . . . . . . ......0.3 V to +4.0 V
OE# and RESET#
(Note 2) . . . . . . . . . . . . . . . . . . . .....0.5 V to +12.5 V
WP#/ACC . . . . . . . . . . . . . . . . . .......0.5 V to +10.5 V
All other pins (Note 1) . . . . . . .....0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . ... ..200 mA

Notes:
1. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 7. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8.
2. Minimum DC input voltage on pins OE#, RESET#, and WP#/ACC is 0.5 V. During voltage ransitions,OE#,WP#/ACC, and RESET# may overshoot VSS to 2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC input voltage on pin RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may overshoot to +12.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.




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