DS42515

MCP Features
Power supply voltage of 2.7 to 3.3 volt
High performance
- 85 ns maximum access time
Package
- 69-Ball FBGA
Operating Temperature
- 25°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
- Data can be continuously read from one bank while executing erase/program functions in other bank
- Zero latency between read and write operations
Secured Silicon (SecSi) Sector: Extra 64 KByte sect
- Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; ver as factory locked through autoselect function.
- Customer lockable: Can be read, programmed, or era just like other sectors. Once locked, data cannot be changed
Zero Power Operation
- Sophisticated power management circuits reduce po consumed during inactive periods to nearly zero
Bottom boot block 
Manufactured on 0.23 m process technology
Compatible with JEDEC standards
- Pinout and software compatible with single-power-supply flash standard
PERFORMANCE CHARACTERISTICS High performance
- 85 ns access time
- Program time: 7 s/word typical utilizing Accelerate function
Ultra low power consumption (typical values)
- 2 mA active read current at 1 MHz
- 10 mA active read current at 5 MHz
- 200 nA in standby or automatic sleep mode
Minimum 1 million write cycles guaranteed per sec
20 Year data retention at 125°C
- Reliable operation for the life of the system
SOFTWARE FEATURES
Data Management Software (DMS)
- AMD-supplied software manages data programming and erasing, enabling EEPROM emulation
- Eases sector erase limitations
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
- Suspends erase operations to allow programming in same bank
Data# Polling and Toggle Bits
- Provides a software method of detecting the status of program or erase cycles
Unlock Bypass Program command
- Reduces overall programming time when issuing multiple program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased 
Ready/Busy# output (RY/BY#)
- Hardware method for detecting program or erase cycle completion
Hardware reset pin (RESET#)
- Hardware method of resetting the internal state machine to reading array data
WP#/ACC input pin
- Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status
- Acceleration (ACC) function accelerates program timing
Sector protection
- Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector
- Temporary Sector Unprotect allows changing data in protected sectors in-system
SRAM Features
Power dissipation
- Operating: 50 mA maximum
- Standby: 7 A maximum
CE1#s and CE2s Chip Select
Power down features using CE1#s and CE2s
Data retention supply voltage: 1.5 to 3.3 volt
Byte data control: LB#s (DQ0DQ7), UB#s (DQ8DQ15)

The Am29DL164 is a 16 megabit, 3.0 volt-only flash memory device, organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. Word mode data appears on DQ0DQ15; byte mode data appears on DQ0DQ7. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.

The Am29DL164 device is available with an access time of 85 ns.The device is offered in a 69-ball FBGA package.Standard control pins-chip enable (CE#f), write enable (WE#), and output enable (OE#)-control normal read and write operations, and avoid bus contention issues.

The Am29DL164 device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.