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DS34LV87T

PinoutSpecificationsDrivers4Receivers0SupplyVoltage3.3 VoltProcessCMOSTemperature Min-40 deg CTemperature Max85 deg C View Using CatalogDescriptionThe DS34LV87T is a high speed quad differential CMOS driver that meets the requirements of both TIA/EIA-422-B and ITU-T V.11. The CMOS DS34LV87T featur...

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SeekIC No. : 004329009 Detail

DS34LV87T: PinoutSpecificationsDrivers4Receivers0SupplyVoltage3.3 VoltProcessCMOSTemperature Min-40 deg CTemperature Max85 deg C View Using CatalogDescriptionThe DS34LV87T is a high speed quad differential CMO...

DS34LV87T Data Sheet

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Part Number:
DS34LV87T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



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Specifications

Drivers4
Receivers0
SupplyVoltage3.3 Volt
ProcessCMOS
Temperature Min-40 deg C
Temperature Max85 deg C
View Using Catalog



Description

The DS34LV87T is a high speed quad differential CMOS driver that meets the requirements of both TIA/EIA-422-B and ITU-T V.11. The CMOS DS34LV87T features low static ICC of 100 µA max which makes it ideal for battery powered and power conscious applications. The TRI-STATE® enable, EN, allows the device to be disabled when the device is not in use to minimize power. The dual enable scheme allows for flexibility in turning devices on or off.

Protection diodes protect all the driver inputs against electrostatic discharge. The DS34LV87T driver and enable inputs (DI and EN) are compatible with LVTTL and LVCMOS devices. Differential outputs have the same VOD (>=2V) guarantee as the 5V version. The outputs have enhanced ESD Protection providing greater than 7 kV tolerance.

Reliability Metrics

Part Number Process EFR Reject EFR Sample Size PPM LTA Rejects LTA Device Hours FITS MTTF (Hours)
DS34LV87TM CS200* 0 9850 0 0 3375000 2 957665465
DS34LV87TMX CS200* 0 9850 0 0 3375000 2 957665465

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

For more information on Reliability Metrics, please click here.





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