Features: • Low power CMOS design• Standby current 50 nA max at tA = 25°C VCC = 3.0V 100 nA max at tA = 25°C VCC = 5.5V 1 mA max at tA = 60°C VCC = 5.5V• Full operation for VCC = 4.5V to 5.5V• Data Retention Voltage = 5.5V to 2.0V• Access time equals 200 ns at 5.0V...
DS2064: Features: • Low power CMOS design• Standby current 50 nA max at tA = 25°C VCC = 3.0V 100 nA max at tA = 25°C VCC = 5.5V 1 mA max at tA = 60°C VCC = 5.5V• Full operation for VCC = 4...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SYMBOL |
PARAMETER |
RATING |
VCC |
Power Supply Voltage |
0.3V to +7.0V |
VIN, VI/O |
Input, Input/Output Voltage |
0.3 to VCC + 0.3V |
TSTG |
Storage Temperature |
55°C to +125°C |
TOPR |
Operating Temperature |
40°C to +85°C |
TSOLDER |
Soldering Temperature/Time |
260°C for 10 seconds |
The DS2064 is a 65536bit low power, fully static random access memory organized as 8192 words by eight bits using CMOS technology. The device operates from a single power supply with a voltage input between 4.5V and 5.5V. The chip enable inputs (CE1 and CE2) are used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operate and battery backup applications. The device provides fast access time of 200 ns and is most suitable for low power applications where battery operation or battery backup for nonvolatility are required. The DS2064 is a JEDECstandard 8K x 8 SRAM and is pincompatible with ROM and EPROM of similar density.