Features: Low-power CMOS design Standby current- 50 nA max at tA = 25 VCC = 3.0V- 100 nA max at tA = 25 VCC = 5.5V- 1 µA max at tA = 60 VCC = 5.5V Full operation for VCC = 5.5V to 2.7V Data retention voltage = 5.5V to 2.0V Fast 5V access time- DS2016 - 100 100 ns- DS2016 - 150 150 ns Reduced...
DS2016: Features: Low-power CMOS design Standby current- 50 nA max at tA = 25 VCC = 3.0V- 100 nA max at tA = 25 VCC = 5.5V- 1 µA max at tA = 60 VCC = 5.5V Full operation for VCC = 5.5V to 2.7V Data re...
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Linear and Switching Power Supplies 12V Out 2000W 1UX4.2"X11" w/5V Sby
SYMBOL |
PARAMETER |
RATING |
VCC |
Power Supply Voltage |
-0.3V to +7.0V |
VIN , VI/O |
Input, Input/Output Voltage |
-0.3 to VCC +0.3V |
TSTG |
Storage Temperature |
-55 to +125 |
TOPR |
Operating Temperature |
40 to +85 |
TSOLDER |
Soldering Temperature/Time |
260 for 10 seconds |
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random accessmemory organized as 2048 words by 8 bits using CMOS technology. The device operates from a singlepower supply with a voltage input between 2.7 and 5.5 volts. The chip enable input (CE ) is used fordevice selection and can be used in order to achieve the minimum standby current mode, which facilitatesboth battery operated and battery backup applications. The device provides access times as fast as 100 ns
when operated from a 5-volt power supply input and also provides relatively good performance of 250 nsaccess while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over theinput voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications wherebattery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8SRAM and is pin-compatible with ROM and EPROM of similar density.