DS2016

Features: Low-power CMOS design Standby current- 50 nA max at tA = 25 VCC = 3.0V- 100 nA max at tA = 25 VCC = 5.5V- 1 µA max at tA = 60 VCC = 5.5V Full operation for VCC = 5.5V to 2.7V Data retention voltage = 5.5V to 2.0V Fast 5V access time- DS2016 - 100 100 ns- DS2016 - 150 150 ns Reduced...

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SeekIC No. : 004328758 Detail

DS2016: Features: Low-power CMOS design Standby current- 50 nA max at tA = 25 VCC = 3.0V- 100 nA max at tA = 25 VCC = 5.5V- 1 µA max at tA = 60 VCC = 5.5V Full operation for VCC = 5.5V to 2.7V Data re...

floor Price/Ceiling Price

Part Number:
DS2016
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/20

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Product Details

Description



Features:

 Low-power CMOS design
Standby current
-  50 nA max at tA = 25 VCC = 3.0V
-  100 nA max at tA = 25 VCC = 5.5V
-  1 µA max at tA = 60 VCC = 5.5V
  Full operation for VCC = 5.5V to 2.7V
Data retention voltage = 5.5V to 2.0V
  Fast 5V access time
-  DS2016 - 100 100 ns
-  DS2016 - 150 150 ns
  Reduced-speed 3V access time
-  DS2016 - 100 250 ns
-  DS2016 - 150 250 ns
  Operating temperature range of -40 to+85
  Full static operation
  TTL compatible inputs and outputs overvoltage range of 5.5V to 2.7 volts.
  Available in 24-pin DIP and 24-pin SOICpackages
  Suitable for both battery operated and batterybackup applications



Pinout

  Connection Diagram


Specifications

SYMBOL

PARAMETER

RATING

VCC

Power Supply Voltage

-0.3V to +7.0V

VIN , VI/O

Input, Input/Output Voltage

-0.3 to VCC +0.3V

TSTG

Storage Temperature

-55 to +125

TOPR

Operating Temperature

40 to +85

TSOLDER

Soldering Temperature/Time

260 for 10 seconds




Description

The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random accessmemory organized as 2048 words by 8 bits using CMOS technology. The device operates from a singlepower supply with a voltage input between 2.7 and 5.5 volts. The chip enable input (CE ) is used fordevice selection and can be used in order to achieve the minimum standby current mode, which facilitatesboth battery operated and battery backup applications. The device provides access times as fast as 100 ns

when operated from a 5-volt power supply input and also provides relatively good performance of 250 nsaccess while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over theinput voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications wherebattery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8SRAM and is pin-compatible with ROM and EPROM of similar density.




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