Features: Converts CMOS RAMs into nonvolatile memories Automatically selects +3.0V or +5.0V operation SOIC version is pin-compatible with the Dallas Semiconductor DS1210S and DS1610S NV ControllersUnconditionally write protects all of memory when VCC is out of toleranceWrite protects selected bloc...
DS1710: Features: Converts CMOS RAMs into nonvolatile memories Automatically selects +3.0V or +5.0V operation SOIC version is pin-compatible with the Dallas Semiconductor DS1210S and DS1610S NV ControllersU...
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The DS1710 is a low-power CMOS circuit which solves the application problems of converting CMOS RAMS into nonvolatile memories. In addition the device has the ability to unconditionally write protect blocks of memory so that inadvertent write cycles do not corrupt program and special data space. The incoming power supply voltage at the VCCI input pin is constantly monitored for an out-of-tolerance condition. When such a condition is detected, both the chip enable and write enable outputs are inhibited to protect stored data. The battery inputs are used to supply VCCO with power when VCCI is less than the battery input voltages. Special circuitry uses a low leakage CMOS process which affords precise voltage detection at extremely low current consumption. By combining the DS1710 Partitioned NV Controller chip with a CMOS memory and batteries, nonvolatile RAM operation can be achieved.
The DS1710 Partitioned NV Controller incorporates all the functions of the DS1610 with the additional feature of either +3.0V or +5.0V operation. The DS1710 functions like the Dallas Semiconductor DS1210 NV controller when the ( DIS) disable pin is grounded and also incorporates the power-up auto sensing. An internal pulldown resistor to ground on the DIS pin of the DS1710S allows it to retrofit into DS1210S applications. When the DIS pin is grounded the address inputs AW - AZ and the write enable input WEI are ignored. Also the power-fail output PFO and the write enable output WEO are tristated.