DS1350WP-150-IND

The DS1350WP-150-IND is one member of the DS1230WP family which is designed as the 3.3V 4096K Nonvolatile SRAM that can be used in place of 512K x 8 SRAM, EEPROM or Flash components. This device executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable) and OE (Output Enable) are active (low) in the read mode, and excutes a write cycle whenever the WE and CE signals are in the active (low) state after address inputs are stable in write mode.

Features of the DS1350WP-150-IND are:(1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC rampp; (4)Battery monitor checks remaining capacity daily; (5)Read and write access times as fast as 150 ns; (6)Unlimited write cycle endurance; (7)Typical standby current 50 mA; (8)Upgrade for 512K x 8 SRAM, EEPROM or Flash; (9)Lithium battery is electrically disconnected to retain freshness until power is applied for the first time; (10)Optional industrial temperature range of -40 to +85 , designated IND.

The absolute maximum ratings of the DS1350WP-150-IND can be summarized as:(1)Voltage on Any Pin Relative to Ground: -0.3 V to +4.6 V;(2)Operating Temperature: 0°C to 70°C, -40°C to +85°C for IND parts;(3)Storage Temperature: -40°C to +70°C, -40°C to +85°C for IND parts;(4)Soldering Temperature: 260°C for 10 seconds.

The electrical characteristics of this device DS1350WP-150-IND can be summarized as:(1)Input Leakage Current: -1.0 to +1.0 V;(2)I/O Leakage Current CE VIH VCC: -1.0 to +1.0 A;(3)Output Current @ 2.2V: -1.0 mA;(4)Output Current @ 0.4V: 2.0 mA;(5)Standby Current CE =2.2V: 50 to 250 A;(6)Standby Current CE =VCC-0.2V: 30 to 150 A;(7)Operating Current: 50 mA;(8)Write Protection Voltage: 2.8 to 3.0 V. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .