Features: ` Five years minimum data retention in the absence of external power` Data is automatically protected during power loss` Unlimited write cycles` Low-power CMOS operation` Read and write access times as fast as 100ns` Lithium energy source is electrically disconnected to retain freshness ...
DS1270W: Features: ` Five years minimum data retention in the absence of external power` Data is automatically protected during power loss` Unlimited write cycles` Low-power CMOS operation` Read and write ac...
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Voltage on Any Pin Relative to Ground....................................................... -0.3V to +4.6V
Operating Temperature Range................ 0°C to 70°C (-40°C to +85°C for IND parts)
Storage Temperature Range.............. -40°C to +70°C (-40°C to +85°C for IND parts)
Soldering Temperature................................................................. +260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM DS1270W has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed, and no additional support circuitry is required for microprocessor interfacing.