DS1249AB

Features:

10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±=10% V_CC operating range (DS1249Y)
Optional ±=5% V_CC operating range (DS1249AB)
Optional industrial temperature range of -40°C to +85°C, designated IND
JEDEC standard 32-pin DIP package


Pinout




Specifications

Voltage on Any Pin Relative to Ground                    -0.3V to +6.0V
Operating Temperature                                           0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature                                              -40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature                                            260°C for 10 seconds


Description

The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM DS1249 has a self-contained lithium energy source and control circuitry which constantly monitors V_CC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.