DS1230Y

Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossReplaces 32k x 8 volatile static RAM,EEPROM or Flash memoryUnlimited write cyclesLow-power CMOSRead and write access times as fast as 70 nsLithium energy source is electricall...

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DS1230Y Picture
SeekIC No. : 004328450 Detail

DS1230Y: Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossReplaces 32k x 8 volatile static RAM,EEPROM or Flash memoryUnlimited write ...

floor Price/Ceiling Price

Part Number:
DS1230Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Replaces 32k x 8 volatile static RAM,EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% VCC operating range (DS1230Y)
Optional ±5% VCC operating range (DS1230AB)
Optional industrial temperature range of -40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
    -  Directly surface-mountable module
    -  Replaceable snap-on PowerCap provides  lithium backup battery
    -  Standardized pinout for all nonvolatile  SRAM products
    -  Detachment feature on PowerCap allows  easy removal using a regular screwdriver



Pinout

  Connection Diagram




Specifications

Voltage on Any Pin Relative to Ground                                                                           -0.3V to +7.0V
Operating Temperature                                                0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature                                              -40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature                                                                                      260°C for 10 seconds
  


Description

The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.  When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.  DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices DS1230 also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance.  DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications.  There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.


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