DS1230WP-150-IND

The DS1230WP-150-IND is one member of the DS1230WP family which is designed as the 262,144-bit, fully static, nonvolatile SRAM that can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. Also this device match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance.

Features of the DS1230WP-150-IND are:(1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times as fast as 150 ns; (7)Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time; (8)Optional industrial temperature range of -40°C to +85°C, designated IND; (9)JEDEC standard 28-pin DIP package; (10)new powercap module (PCM) package.

The absolute maximum ratings of the DS1230WP-150-IND can be summarized as:(1)Voltage on Any Pin Relative to Ground: -0.3 V to +4.6 V;(2)Operating Temperature: 0°C to 70°C, -40°C to +85°C for IND parts;(3)Storage Temperature: -40°C to +70°C, -40°C to +85°C for IND parts;(4)Soldering Temperature: 260°C for 10 seconds.

The electrical characteristics of this device DS1230WP-150-IND can be summarized as:(1)Input Leakage Current: -1.0 to +1.0 V;(2)I/O Leakage Current CE VIH VCC: -1.0 to +1.0 A;(3)Output Current @ 2.2V: -1.0 mA;(4)Output Current @ 0.4V: 2.0 mA;(5)Standby Current CE =2.2V: 50 to 250 A;(6)Standby Current CE =VCC-0.2V: 30 to 150 A;(7)Operating Current: 50 mA;(8)Write Protection Voltage: 2.8 to 3.0 V. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .