DS1225Y

Features: • 10 years minimum data retention in the absence of external power• Data is automatically protected during power loss• Directly replaces 8K x 8 volatile static RAM or EEPROM• Unlimited write cycles• Low-power CMOS• JEDEC standard 28pin DIP package̶...

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DS1225Y Picture
SeekIC No. : 004328444 Detail

DS1225Y: Features: • 10 years minimum data retention in the absence of external power• Data is automatically protected during power loss• Directly replaces 8K x 8 volatile static RAM or EEP...

floor Price/Ceiling Price

Part Number:
DS1225Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 10 years minimum data retention in the absence of external power
• Data is automatically protected during power loss
• Directly replaces 8K x 8 volatile static RAM or EEPROM
• Unlimited write cycles
• Low-power CMOS
• JEDEC standard 28pin DIP package
• Read and write access times as fast as 150 ns
• Full ±10% operating range
• Optional industrial temperature range of 40°C to +85°C, designated IND



Pinout

  Connection Diagram


Specifications

Voltage on Any Pin Relative to Ground ....................................0.3V to +7.0V
Operating Temperature ..............0°C to 70°C; 40°C to +85°C for IND parts
Storage Temperature ...........40°C to +70°C; 40°C to +85°C for IND parts
Soldering Temperature .................................................260°C for 10 seconds

* This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.




Description

The DS1225Y 64K Nonvolatile SRAM is a 65,536bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a selfcontained lithium energy source and control circuitry which constantly monitors VCC for an outoftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 8K x 8 SRAMsdirectly conforming to the popular bytewide 28pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.




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