Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossDirectly replaces 2k x 8 volatile static RAM or EEPROMUnlimited write cyclesLow-power CMOSJEDEC standard 24-pin DIP packageRead and write access times as fast as 100 nsFull ±1...
DS1220Y: Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossDirectly replaces 2k x 8 volatile static RAM or EEPROMUnlimited write cycle...
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The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required formicroprocessor interfacing.