DS1220Y

Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossDirectly replaces 2k x 8 volatile static RAM or EEPROMUnlimited write cyclesLow-power CMOSJEDEC standard 24-pin DIP packageRead and write access times as fast as 100 nsFull ±1...

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DS1220Y Picture
SeekIC No. : 004328441 Detail

DS1220Y: Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossDirectly replaces 2k x 8 volatile static RAM or EEPROMUnlimited write cycle...

floor Price/Ceiling Price

Part Number:
DS1220Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Directly replaces 2k x 8 volatile static RAM or  EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100 ns
Full ±10% operating range
Optional industrial temperature range of -40°C to +85°C, designated IND



Pinout

  Connection Diagram


Specifications

Voltage on Any Pin Relative to Ground......................................-0.3V to +7.0V
Operating Temperature...........0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature.........-40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature.................................................260°C for 10 seconds
 


Description

    The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required formicroprocessor interfacing.




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