DS1220AB

Features:

10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Directly replaces 2k x 8 volatile static RAM or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100 ns
Lithium energy source is electrically
disconnected to retain freshness until power is applied for the first time
Full ±10% VCC operating range (DS1220AD)

Optional ±5% VCC operating range(DS1220AB)
Optional industrial temperature range of -40°C to +85°C, designated IND

Pinout




Specifications

Voltage on Any Pin Relative to Ground  -0.3V to +7.0V
Operating Temperature  0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature  -40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature  260°C for 10 seconds


Description

The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source andcontrol circuitry which constantly mo-nitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The DS1220AB and DS1220AD also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance.There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.