Features: · 4.8 Volt operation· P1dB 28 dBm @f=465MHz· Power gain 10 dB @f=465MHzApplicationHand-held radio equipment in commonemitter class-AB operation in 450 MHzcommunication band.Specifications SYMBOL PARAMETER CONDITION VALUE Unit VCBO Collector-Base Voltage Open E...
DRF1402F: Features: · 4.8 Volt operation· P1dB 28 dBm @f=465MHz· Power gain 10 dB @f=465MHzApplicationHand-held radio equipment in commonemitter class-AB operation in 450 MHzcommunication band.Specifications ...
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Hand-held radio equipment in common
emitter class-AB operation in 450 MHz
communication band.
SYMBOL |
PARAMETER |
CONDITION |
VALUE |
Unit |
VCBO |
Collector-Base Voltage |
Open Emitter |
20 |
V |
VCEO |
Collector-Emitter Voltage |
Open Base |
8 |
V |
VEBO |
Emitter-Base Voltage |
Open Collector |
4 |
V |
IC |
Collector Current (DC) |
350 |
mA | |
PT |
Total Power Dissipation |
Ts=60;note 1 |
1 |
W |
TSTG |
Storage Temperature |
-65~150 |
||
TJ |
Operating Junction Temperature |
150 |
The DRF1402F is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-89 SMD package. The DRF1402F can be used as a driver device or an output device, depending on the specific application