Transistors Bipolar (BJT) NPN 1W
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 12 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 4 A |
DC Collector/Base Gain hfe Min : | 500 at 0.1 A at 2 V | Configuration : | Single Dual Collector |
Maximum Operating Frequency : | 150 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-223 |
Packaging : | Reel |
Technical/Catalog Information | DNLS412E-13 |
Vendor | Diodes Inc (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Current - Collector (Ic) (Max) | 4A |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 20mA, 3A |
Frequency - Transition | 150MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
Packaging | Digi-Reel? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | DNLS412E 13 DNLS412E13 DNLS412EDIDKR ND DNLS412EDIDKRND DNLS412EDIDKR |