DN2470

Features:

High input impedance 
Low input capacitance 
Fast switching speeds 
Low on resistance 
Free from secondary breakdown 
Low input and output leakages


Application

Normally-on switches
Solid state relays
Battery operated systems
Converters
Linear amplifiers
Constant current sources
Telecom 
 


Specifications

Drain-to-Source Voltage............................................  BV_DSX
Drain-to-Gate Voltage .............................................. BV_DGX
Gate-to-Source Voltage.............................................  ±20V
Operating and Storage
Temperature ...............................................-55 to +150
Soldering Temperature* ............................................ 300



Description

This low threshold depletion-mode (normally-on)  transistor utilizes an advanced vertical DMOS  structure and Supertex's well-proven silicon-gate
manufacturing process.  This combination produces a  device(The DN2470) with the power handling capabilities of bipolar  transistors and with the high input impedance and  positive temperature coefficient inherent in MOS devices.  Characteristic of all MOS structures, DN2470 is free from thermal runaway and thermally-induced secondary breakdown.   
 
Supertex's vertical DMOS FET is ideally suited to a  wide range of switching and amplifying applications  where very low threshold voltage, high breakdown  voltage, high input impedance, low input capacitance, and fast switching speeds are desired.