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DMS3012SFG-7

MOSFET N CH 30V POWERDI 3333-8

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SeekIC No. : 003430988 Detail

DMS3012SFG-7: MOSFET N CH 30V POWERDI 3333-8

DMS3012SFG-7 Data Sheet

floor Price/Ceiling Price

US $ .14~.4 / Piece | Get Latest Price
Part Number:
DMS3012SFG-7
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.4
  • $.34
  • $.3
  • $.25
  • $.22
  • $.19
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: - Manufacturer: Diodes Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 14.7nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4310pF @ 15V
Power - Max: 890mW Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN Supplier Device Package: PowerDI3333-8    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 12A
Manufacturer: Diodes Inc
Input Capacitance (Ciss) @ Vds: 4310pF @ 15V
Package / Case: 8-PowerWDFN
Supplier Device Package: PowerDI3333-8
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V
Power - Max: 890mW
Gate Charge (Qg) @ Vgs: 14.7nC @ 10V


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