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DMN5L06DW-7: MOSFET Dual N-Channel

DMN5L06DW-7 Data Sheet

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Part Number:: DMN5L06DW-7
Mfg:: Diodes Inc.
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	50 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	0.28 A
Resistance Drain-Source RDS (on) :	3000 mOhms at 2.7 V	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-363-6	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SOT-363-6
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 0.28 A
Resistance Drain-Source RDS (on) : 3000 mOhms at 2.7 V

Parameters:

Technical/Catalog Information	DMN5L06DW-7
Vendor	Diodes Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	280mA
Rds On (Max) @ Id, Vgs	3 Ohm @ 200mA, 2.7V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	200mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	-
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	DMN5L06DW 7 DMN5L06DW7 DMN5L06DWDIDKR ND DMN5L06DWDIDKRND DMN5L06DWDIDKR

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DMN5L06DW-7

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