DMN2100UDM-7

MOSFET 900mW 20Vdss

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DMN2100UDM-7 Picture
SeekIC No. : 00150848 Detail

DMN2100UDM-7: MOSFET 900mW 20Vdss

floor Price/Ceiling Price

US $ .17~.31 / Piece | Get Latest Price
Part Number:
DMN2100UDM-7
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.31
  • $.26
  • $.19
  • $.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 55 mOhms at 4.5 V Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-26 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Quad Drain
Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 55 mOhms at 4.5 V
Package / Case : SOT-26


Parameters:

Technical/Catalog InformationDMN2100UDM-7
VendorDiodes Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs55 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds 555pF @ 10V
Power - Max900mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-26
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names DMN2100UDM 7
DMN2100UDM7
DMN2100UDMDIDKR ND
DMN2100UDMDIDKRND
DMN2100UDMDIDKR



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