DMN100-7

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Feature: Standard
Power - Max: 500mW
Current - Continuous Drain (Id) @ 25° C: 1.1A
Packaging: Cut Tape (CT)
Manufacturer: Diodes Inc
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SC-59-3
Input Capacitance (Ciss) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1A, 10V
Gate Charge (Qg) @ Vgs: 5.5nC @ 10V


Parameters:

Technical/Catalog Information	DMN100-7
Vendor	Diodes Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	1.1A
Rds On (Max) @ Id, Vgs	240 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	150pF @ 10V
Power - Max	500mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	5.5nC @ 10V
Package / Case	SC-59-3, SMT3, SOT-346, TO-236
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	DMN100 7 DMN1007 DMN100DICT ND DMN100DICTND DMN100DICT