Transistors Bipolar (BJT) NPN BIPOLAR
DMMT5551S-7-F: Transistors Bipolar (BJT) NPN BIPOLAR
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 160 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.2 A |
DC Collector/Base Gain hfe Min : | 80 at 1 mA at 5 V | Configuration : | Dual |
Maximum Operating Frequency : | 300 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-26 |
Packaging : | Reel |
Technical/Catalog Information | DMMT5551S-7-F |
Vendor | Diodes Inc |
Category | Discrete Semiconductor Products |
Transistor Type | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Current - Collector (Ic) (Max) | 200mA |
Power - Max | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Frequency - Transistion | 300MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-26 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | DMMT5551S 7 F DMMT5551S7F |