Features: Epitaxial Planar Die ConstructionLow NoiseHigh Current GainMatched Pair of TransistorsSpecifications Characteristic Symbol DMDT9922 Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCBO -40 V Emitter-Base Voltage VEBO ...
DMDT9922: Features: Epitaxial Planar Die ConstructionLow NoiseHigh Current GainMatched Pair of TransistorsSpecifications Characteristic Symbol DMDT9922 Unit Collector-Base Voltage VCBO...
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Epitaxial Planar Die Construction
Low Noise
High Current Gain
Matched Pair of Transistors
Characteristic |
Symbol |
DMDT9922 |
Unit |
Collector-Base Voltage |
VCBO |
-50 |
V |
Collector-Emitter Voltage |
VCBO |
-40 |
V |
Emitter-Base Voltage |
VEBO |
-5.0 |
V |
Collector-Collector Voltage |
VCCO |
-50 |
V |
Emitter-Emitter Voltage |
VEEO |
-50 |
V |
Collector Current - Continuous (Note 1) |
IC |
-100 |
mA |
Power Dissipation (Note 1) |
Pd |
200 |
mW |
Thermal Resistance, Junction to Ambient (Note 1) |
RJA |
625 |
K/W |
Operating and Storage and Temperature Range |
Tj,TSTG |
-55 to +125 |