MOSFET N/P-CH 40V 4.2A SO8
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Specifications Parameter Symbol Conditions Min. Max. Units Supply Voltage (Logi...
Series: | - | Manufacturer: | Diodes Inc |
FET Type: | N and P-Channel | FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 40V | Current - Continuous Drain (Id) @ 25° C: | 4.2A |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 3A, 10V | Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) @ Vgs: | 37.56nC @ 10V | Input Capacitance (Ciss) @ Vds: | 1790.8pF @ 20V |
Power Dissipation : | 21 W | Power - Max: | 1.25W |
Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |