DM74LS670

Supply Voltage . . . . . . . . . . . . . . . . . .  . . . . . . . . .  . . . . . . . . .  . . . . . . . . .  . . . . . . . . . 7V
Input Voltage  . . . . . . . . .  . . . . . . . . .  . . . . . . . . .  . . . . . . . . . . .  . . . . . . .  . . . . . . . . . 7V
Operating Free Air Temperature Range  . . . . . . . . .  . . . . . . . . .  . . . . . . . . 0°C to +70°C
Storage Temperature Range  . . . . . . . . .  . . . . . . . . .  . . . . . . . . .  . . . . -65°C to +150°C

Note 4: The "Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. The "Recommended Operating Conditions" table will define the conditions for actual device operation.

These DM74LS670 register files are organized as 4 words of 4 bits each, and separate on-chip decoding is provided for addressing the four word locations to either write-in or retrieve data. This permits writing into one location, and reading from another word location, simultaneously.

Four data inputs are available to supply the word to be stored. Location of the word is determined by the write select inputs A and B, in conjunction with a write-enable signal. Data applied at the inputs should be in its true form. That is, if a high level signal is desired from the output, a high level is applied at the data input for that particular bit location. The latch inputs are arranged so that new data will be accepted only if both internal address gate inputs are HIGH. When this condition exists, data at the D input is transferred to the latch output. When the write-enable input, GW, is HIGH, the data inputs are inhibited and their levels can cause no change in the information stored in the internal latches. When the read-enable input, GR, is HIGH, the data outputs are inhibited and go into the high impedance state.

The individual address linesof DM74LS670 permit direct acquisition of data stored in any four of the latches. Four individual decoding gates are used to complete the address for reading a word. When the read address is made in conjunction with the read-enable signal, the word appears at the four outputs.

This arrangement-data entry addressing separate from data read addressing and individual sense line - eliminates recovery times, permits simultaneous reading and writing, and is limited in speed only by the write time (27 ns typical) and the read time (24 ns typical). The DM74LS670 register file has a non-volatile readout in that data is not lost when addressed.

All inputs (except read enable and write enable) are buffered to lower the drive requirements to one normal Series DM74LS load, and input clamping diodes minimize switching transients to simplify system design. High speed, double ended AND-OR-INVERT gates are employed for the read-address function and have high sink current, 3-STATE outputs. Up to 128 of these outputs may be wire-AND connected for increasing the capacity up to 512 words. Any number of these DM74LS670 registers may be paralleled to provide nbit word length.