DL-xxBS10

Features: · 1,048,576-word x 36-bit organization· 72-pin socket insertable module - MSC23136D/DL-xxBS10 : Gold tab - MSC23136D/DL-xxDS10 : Solder tab· Single +5V supply ± 10% tolerance· Input : TTL compatible· Output : TTL compatible, 3-state· Refresh : 1024cycles/16ms (1024cycles/128ms: L-version...

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DL-xxBS10 Picture
SeekIC No. : 004326868 Detail

DL-xxBS10: Features: · 1,048,576-word x 36-bit organization· 72-pin socket insertable module - MSC23136D/DL-xxBS10 : Gold tab - MSC23136D/DL-xxDS10 : Solder tab· Single +5V supply ± 10% tolerance· Input : TTL ...

floor Price/Ceiling Price

Part Number:
DL-xxBS10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· 1,048,576-word x 36-bit organization
· 72-pin socket insertable module
  - MSC23136D/DL-xxBS10 : Gold tab
  - MSC23136D/DL-xxDS10 : Solder tab
· Single +5V supply ± 10% tolerance
· Input : TTL compatible
· Output : TTL compatible, 3-state
· Refresh : 1024cycles/16ms (1024cycles/128ms: L-version)
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode capability
· Multi-bit test mode capability



Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -1.0 to +7.0 V
Voltage on VCC Supply Relative to VSS Vcc -1.0 to +7.0 V
Short circuit current IOS 50 mA
Power dissipation PD 10 W
Operating temperature Topr 0 to 70 °C
Storage temperature Tstg - 40 to 125 °C

*: Ta=25°C




Description

The MSC23136D/DL-xxBS10/DS10 is a fully decoded, 1,048,576-word x 36-bit CMOS dynamic random access memory module composed of eight 4Mb DRAMs in SOJ packages and two 2Mb DRAMs in SOJ packages mounted with ten decoupling capacitors on a 72-pin glass epoxy single-inline package. The MSC23136D/DL-xxBS10/DS10supports any application where high density and large capacity of storage memory are required. The MSC23136DL (the low-power version) is specially designed for lower-power applications.




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