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DIM800JSM33-A000

Features: ` 10.2kV Isolation` 10s Short Circuit Withstand` High Thermal Cycling Capability` Non Punch Through Silicon` Isolated MMC Base with AIN Substrate` Lead Free constructionApplication· High Reliability Inverters· Motor Controllers· Traction Drives· ChoppersSpecificationsStresses above those...

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DIM800JSM33-A000: Features: ` 10.2kV Isolation` 10s Short Circuit Withstand` High Thermal Cycling Capability` Non Punch Through Silicon` Isolated MMC Base with AIN Substrate` Lead Free constructionApplication· High R...

DIM800JSM33-A000 Data Sheet

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Part Number:
DIM800JSM33-A000
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

` 10.2kV Isolation
` 10s Short Circuit Withstand
` High Thermal Cycling Capability
` Non Punch Through Silicon
` Isolated MMC Base with AIN Substrate
` Lead Free construction


Application

· High Reliability Inverters
· Motor Controllers
· Traction Drives
· Choppers


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise
Symbol Parameter Test Conditions
Max.
Units
VCES Collector-emitter voltage VGE = 0V
3300
V
VGES Gate-emitter voltage
±20
V
IC Continuous collector current Tcase = 80˚C
800
A
IC(PK) Peak collector current 1ms, Tcase = 115˚C
1600
A
Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
9.6
kW
I2t Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C
320
kA2S
Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz
10.2
kV
QPD Partial discharge - per module IEC1287. V1 = 7000V, V2 = 5100V, 50Hz RMS
10
PC



Description

The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 2400A.

The DIM800JSM33-A000 is a single switch high isolation 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10ms short circuit withstand. DIM800JSM33-A000 is optimised for traction drives and other applications requiring high thermal cycling capability.

The module DIM800JSM33-A000 incorporates an electrically isolated base plate. The profile of the lid in combination with features within the module provides 10.2kV isolation rating.




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