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DIM800DDS12-A000

Features: ` 10s Short Circuit Withstand` Non Punch Through Silicon` Isolated Copper Baseplate` Lead Free constructionApplication· High Power Inverters· Motor ControllersSpecificationsStresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme c...

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DIM800DDS12-A000: Features: ` 10s Short Circuit Withstand` Non Punch Through Silicon` Isolated Copper Baseplate` Lead Free constructionApplication· High Power Inverters· Motor ControllersSpecificationsStresses above ...

DIM800DDS12-A000 Data Sheet

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Part Number:
DIM800DDS12-A000
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

` 10s Short Circuit Withstand
` Non Punch Through Silicon
` Isolated Copper Baseplate
` Lead Free construction


Application

· High Power Inverters
· Motor Controllers


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise
Symbol Parameter Test Conditions
Max.
Units
VCES Collector-emitter voltage VGE = 0V
1200
V
VGES Gate-emitter voltage
±20
V
IC Continuous collector current Tcase = 85˚C
800
A
IC(PK) Peak collector current 1ms, Tcase = 115˚C
1600
A
Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
6940
W
I2t Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C
100
kA2S
Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS,1 min, 50Hz
2500
V



Description

The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 2400A.

The DIM800DDS12-A000 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10ms short circuit withstand.

The module DIM800DDS12-A000 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.




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