Features: 10s Short Circuit WithstandHigh Thermal Cycling CapabilityNon Punch Through SiliconIsolated MMC Base with AlN SubstratesApplicationInvertersMotor ControllersTraction DrivesSpecifications Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage...
DIM800DDM12-A000: Features: 10s Short Circuit WithstandHigh Thermal Cycling CapabilityNon Punch Through SiliconIsolated MMC Base with AlN SubstratesApplicationInvertersMotor ControllersTraction DrivesSpecifications ...
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Features: 10s Short Circuit WithstandHigh Thermal Cycling CapabilityNon Punch Through SiliconIsola...
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
VCES |
Collector-emitter voltage |
VGE = 0V |
1200 |
V |
VGES |
Gate-emitter voltage |
- |
±20 |
V |
IC |
Continuous collector current |
Tcase = 85 |
800 |
A |
IC(PK) |
Peak collector current |
1ms,Tcase = 110 |
1600 |
A |
Pmax |
Max. transistor power dissipation |
Tcase = 25, Tj = 150 |
6940 |
W |
I2t |
Diode I2t value |
VR = 0, tp = 10ms, Tvj = 125 |
|
kA2s |
Viso |
Isolationvoltage-per module |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
2500 |
V |
QPD |
Partialdischarge-permodule |
IEC1287.V1=1200V,V2=900V,50Hz RMS |
10 |
pC |