Position: Home  > All Categories> Integrated Circuits (ICs) > DIM600DDM12-E000

DIM600DDM12-E000

Features: ` Trench Gate Field Stop Technology` Low Conduction Losses` Low Switching Losses` 10s Short Circuit Withstand` Isolated MMC Base with AlN Substrates` High Thermal Cycling CapabilityApplication` High Reliability Inverters - Wind Turbines - Motor Controllers - UPS Systems` Traction - Propu...

product image

DIM600DDM12-E000 Picture
See larger image
SeekIC No. : 004326524 Detail

DIM600DDM12-E000: Features: ` Trench Gate Field Stop Technology` Low Conduction Losses` Low Switching Losses` 10s Short Circuit Withstand` Isolated MMC Base with AlN Substrates` High Thermal Cycling CapabilityApplica...

DIM600DDM12-E000 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
DIM600DDM12-E000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` Trench Gate Field Stop Technology
` Low Conduction Losses
` Low Switching Losses
` 10s Short Circuit Withstand
` Isolated MMC Base with AlN Substrates
` High Thermal Cycling Capability


Application

` High Reliability Inverters
   - Wind Turbines
   - Motor Controllers
   - UPS Systems
` Traction
   - Propulsion Drives
   - Auxiliaries


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise
Symbol Parameter Test Conditions
Max.
Units
VCES Collector-emitter voltage VGE = 0V
1200
V
VGES Gate-emitter voltage
±20
V
IC Continuous collector current Tcase =75˚C
600
A
IC(PK) Peak collector current 1ms, Tcase = 110˚C
1200
A
Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
2.94
kW
I2t Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C
100
kA2S
Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS,1 min, 50Hz
2500
V
QPD Partial discharge - per module IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
10
PC



Description

The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A.

The DIM600DDM12-E000 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This module is optimised for applications requiring high thermal cycling capability.

The module DIM600DDM12-E000 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
LED Products
LM24P20
KCG057QV1DB-G770
Cable Assemblies
CS1W-CN114
XW2Z-500T
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Optical Inspection Equipment
AA924
A21K4B
Prototyping Products
AVT4168
DE1
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
View more