Features: ` 10s Short Circuit Withstand` Non Punch Through Silicon` Isolated Copper BaseplateApplication· Inverters· Motor ControllersSpecificationsStresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconducto...
DIM300WHS12-A000: Features: ` 10s Short Circuit Withstand` Non Punch Through Silicon` Isolated Copper BaseplateApplication· Inverters· Motor ControllersSpecificationsStresses above those listed under 'Absolute Maximu...
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Symbol | Parameter | Test Conditions |
Max. |
Units |
VCES | Collector-emitter voltage | VGE = 0V |
1200 |
V |
VGES | Gate-emitter voltage |
±20 |
V | |
IC | Continuous collector current | Tcase =80˚C |
300 |
A |
IC(PK) | Peak collector current | 1ms, Tcase = 115˚C |
600 |
A |
Pmax | Max. transistor power dissipation | Tcase = 25˚C, Tj = 150˚C |
1866 |
W |
I2t | Diode I2t value | VR = 0, tp = 10ms, Tvj = 125˚C |
14 |
kA2S |
Visol | Isolation voltage - per module | Commoned terminals to base plate. AC RMS,1 min, 50Hz |
2500 |
V |
QPD | Partial discharge - per module | IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS |
10 |
PC |
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A.
The DIM300WHS12-A000 is a half bridge switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand.
The module DIM300WHS12-A000 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.