Features: 10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through SiliconIsolated MMC Base with AlN SubstratesApplicationHigh Reliability InvertersMotor Controllers Traction DrivesSpecifications Symbol Parameter Test Conditions Max. Units VCES Colle...
DIM1600FSM17-A000: Features: 10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through SiliconIsolated MMC Base with AlN SubstratesApplicationHigh Reliability InvertersMotor Controllers Traction Dr...
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Features: 10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Is...
10s Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
VCES |
Collector-emitter voltage |
V GE = 0V |
1700 |
V |
VGES |
Gate-emitter voltage |
- |
±20 |
V |
IC |
Continuous collector current |
Tcase = 75 |
1600 |
A |
IC(PK) |
Peak collector current |
1ms, Tcase = 105 |
3200 |
A |
Pmax |
Max. transistor power dissipation |
Tcase = 25, T j = 150 |
13.9 |
kW |
I2t |
Diode I2t value |
VR = 0, tp = 10ms, Tvj = 125 |
480 |
kA2s |
Viso |
Isolationvoltage-per module |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
4000 |
V |
QPD |
Partialdischarge-permodule |
IEC1287.V1=1500V,V2=1100V,50Hz RMS |
10 |
pC |