Features: 10µs Short Circuit WithstandHigh Thermal Cycling CapabilityNon Punch Through SiliconIsolated MMC Base with AlN SubstratesApplicationHigh Reliability InvertersMotor ControllersTraction DrivesSpecifications Symbol Parameter Test Conditions Max. Units VCES C...
DIM1200ESM33-A000: Features: 10µs Short Circuit WithstandHigh Thermal Cycling CapabilityNon Punch Through SiliconIsolated MMC Base with AlN SubstratesApplicationHigh Reliability InvertersMotor ControllersTractio...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: ` 10s Short Circuit Withstand` High Thermal Cycling Capability` Non Punch Through Silico...
Features: ` Trench Gate Field Stop Technology` Low Conduction Losses` Low Switching Losses` 10s Sh...
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
VCES |
Collector-emitter voltage |
VGE = 0V |
3300 |
V |
VGES |
Gate-emitter voltage |
|
±20 |
V |
IC |
Continuous collector current |
Tcase = 80 |
1200 |
A |
IC(PK) |
Peak collector current |
1ms,Tcase = 115 |
2400 |
A |
Pmax |
Max.transistorpowerdissipation |
Tcase = 25, Tj = 150 |
14.7 |
KW |
I2t |
Diode I2t value (Diode arm) |
VR = 0, tp = 10ms, Tvj = 125 |
720 |
kA2s |
Visol |
Isolation voltage -permodule |
Commoned terminals to base plate.ACRMS,1 min, 50Hz |
6000
|
V |
QPD |
Partial discharge-permodule |
IEC1287. V1 = 2450V, V2 =1800V,50HzRMS |
10 |
pC |